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Solutions
- Semiconductor Metrology
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The
Picometer measures
ellipticity parameters with high speed and high precision.
The 2ms response time makes it ideal for use in monitoring
time -dependent changes in samples during fabrication,
for instance monitoring oxide growth, atomic layer deposition,
etc. and a precision of better than 1/100 of a monolayer
of oxide on silicon makes the instrument ideal for studying
very thin gate-oxide/nitride layers, wafer cleanliness,
surface layer uniformity. The spectroscopic option allow
studies between 200nm and 2000nm.
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The
Imaging Ellipsometer
measures an ellipticity image of a surface using imaging
camera, objective lens etc, the complete surface being
studied at the one time. Optional area-size survey, from
low magnification for measuring oxide uniformity on a
300mm wafer, to high magnification with 3 micron lateral
resolution for surveying details of wafer patterns.
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Uses
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Examples/
Applications (click on title)
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CMP
uniformity-end point characterisation
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patterned
surfaces (AP5)
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300mm
wafer oxide uniformity
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oxide thickness monitoring 
