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Solutions
- Semiconductor Metrology
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The Picometer
measures ellipticity parameters with high speed and high precision. The 2ms response
time makes it ideal for use in monitoring time -dependent changes in samples during
fabrication, for instance monitoring oxide growth, atomic layer deposition, etc.
and a precision of better than 1/100 of a monolayer of oxide on silicon makes
the instrument ideal for studying very thin gate-oxide/nitride layers, wafer cleanliness,
surface layer uniformity. The spectroscopic option allow studies between 200nm
and 2000nm. | | | | |
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Imaging Ellipsometer measures an ellipticity
image of a surface using imaging camera, objective lens etc, the complete surface
being studied at the one time. Optional area-size survey, from low magnification
for measuring oxide uniformity on a 300mm wafer, to high magnification with 3
micron lateral resolution for surveying details of wafer patterns.
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| Uses |
Examples/ Applications
(click on title) |  |
| CMP
uniformity-end point characterisation |
patterned
surfaces (AP5) | |
| 300mm
wafer oxide uniformity | |
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oxide thickness monitoring 
